PI Details | Co-PI Details |
---|---|
Dr. Arun Kumar Singh
Designation: Professor |
Dr. Sanjeev Kumar
Designation: Professor |
Funding Agency | Project Cost |
---|---|
ER& IPR, DRDO, New Delhi |
Rs. 31,84,000.00 Amount Received till date (in Rs.) Rs. .30,18,484.00 |
Start Date | Completion Date | Status |
---|---|---|
2016-08-29 | 2018-08-28 | Completed |
This research highlights the high power GaN HEMT technology for the high frequency applications. Semi-insulating SiC substrates are used for optimal performance at higher temperatures. This technology features high performance, high power density, high gain and high efficiency at microwave frequencies. We have reported on the simulation and modelling of GaN transistor and its performance relevant to applications ranging from high power, high frequency and high bandwidth. Additionally, we have analyzed the noise characteristics and cut-off frequencies of the device.
Manpower Sanctioned/Hired | Manpower Trained |
---|---|
JRF (Nos): 02 |
Ph.D Produced: 01 |
Name of Equipment |
Make & Model |
Year of Purchase |
Cost (Rs.) |
Salient Features of Equipment |
Condition (Working /Not Working) |
---|---|---|---|---|---|
Workstation(with Xeon based processor,64 GB RAM, 2 TB HDD,24” Monitor, operating system-red Hat Linux ) |
HP |
2016 |
8,74,650.00 |
High End system for simulations etc. |
Working |
Printer |
HP |
2016 |
43,050.00 |
For Printouts |
Working |
UPS 5KVA (with 120 minutes backup) |
Delta |
2016 |
99,866.00 |
For Power Backup |
Working |
Authors Name |
Title of Paper |
Journal Name |
Volume No. |
Page No. |
Year |
DOI Number |
---|---|---|---|---|---|---|
Madhulika, A. Malik, N. Jain, M. Mishra, S.Kumar, D. S. Rawal and A. K. Singh |
Analytical Model to Evaluate Threshold Voltage of GaN Based HEMT Involving Nanoscale Material Parameters |
Superlattices and Microst. |
152 |
106834 |
2021 |
https://doi.org/10.1016/j.spmi.2021.106834 |
Madhulika, A. Malik, P. Kamboj, S. Awasthi, P. Thakur, N. Jain, M. Mishra, S. Kumar, D. S. Rawal and A. K. Singh |
Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors |
Semicond. Sci. Technol.
|
36 |
035004 |
2021 |
https://doi.org/10.1088/1361-6641/abd265 |
Madhulika, N. Jain, S. Kumar, A. K. Singh |
Influence of barrier and spacer layer on structural and electrical properties of AlGaN/GaN HEMT |
International Journal of Information Technology |
12 |
119–124 |
2020 |
https://doi.org/10.1007/s41870-019-00348-0 |
Madhulika, A. Malik, N. Jain, M. Mishra, S.Kumar, D. S. Rawal and A. K. Singh |
Nanoscale structural parameters based analytical model for GaN HEMTs |
Superlattice and Microst. |
130 |
267-276 |
2019 |
https://doi.org/10.1016/j.spmi.2019.04.040 |
Authors Name |
Title of Paper |
Name of Conference |
Place |
National/ International |
Page No. |
Year |
DOI Number |
---|---|---|---|---|---|---|---|
Madhulika, H. Pandey, M. Garg, N. Jain, S. Kumar, D. S. Rawal, M. Mishra, and A. K. Singh |
Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate |
International Workshop on the Physics of Semiconductor and Devices |
New Delhi |
International |
- |
2018
|
DOI: 10.1007/978-3-319-97604-4_25 |