Deepak Kumar Sharma

Department	Electronics and Communication Engineering
Designation	Assistant Professor
Qualification	B.Tech, BBDIT Ghaziabad MS Research, IIT Mandi PhD , IIT Roorkee, Former Scientist (ISRO Bangalore), All India Rank:1 (ISRO Entrance for Scientist)
Research Interests	Nanoscale MOSFETs, MEMS Inertial Sensors, MEMS based Quadrupole Mass Spectrometer, Thin Film Transistors
Email	deepaksk@pec.edu.in ( Official ) deepaksk1526@gmail.com ( Personal )
Phone Number	9389585817 ( Resdence )

Sr. No.	Title
16	Deepak Kumar Sharma, Arnab Datta “Impact of Varying Strain Energy in Oxide on Random Telegraph Noise and Associated Time Constants in Silicon Nanowire pMOSFETs” IEEE Transactions on Electron Devices, vol. 66, Issue 3, pp. 1489 – 1494, 2019
17	Deepak K. Sharma, Ranjith Kumar Goud, Arnab Datta, Sanjeev Manhas “Field Stress Influenced Conduction Behavior of Narrow Diameter Gate-All-Around (GAA) Silicon Nanowire n-MOSFET” IEEE/TMS Journal of Electronic Materials, vol 48, Issue 12, pp 7674-7679, 2019
18	Amit Chauhan, Deepak K. Sharma, Arnab Datta “Rate limited filament formation in Al-ZnO-Al bipolar ReRAM cells and its impact on early current window closure during cycling” Journal of Applied Physics, AIP, vol. 125, pp. 104503, 2019
19	Deepak K. Sharma, Robin Khosla, Satinder K Sharma” Multilevel metal/Pb (Zr0.52Ti0.48) O3/TiOxNy/Si for next generation FeRAM technology node” Solid-State Electronics, vol. 111, pp. 42-46, 2015
20	Robin Khosla, Deepak K. Sharma, Kunal Mondal, Satinder K Sharma “Effect of electrical stress on Au/Pb(Zr0.52Ti0.48)O3/TiOxNy/Si gate stack for reliability analysis of ferroelectric field effect transistors” Applied Physics Letters, vol. 105, Issue 15, pp. 152907, 2014

Sr. No.	Title	Agency	Duration of Years
1	Simulation framework for Miniature Mass Spectrometsers	PEC Research Initiation Grant, Funding 10 Lakhs	2
2	Thin Film based Faraday Cup integrated with Thin Film Transistors for low Ion Current Measurements in Miniature Mass Spectrometers	Bhabha atomic research centre, Board of research in nuclear sciences (BRNS), Funding: 45 Lakhs	3
3	Fabrication of Source Gated Thin Film Transistors for Sensor Interfaces	INUP-i2i, IIT Delhi	1
4	Development of MEMS based Mass Spectrometer	Department of Space (Inhouse Project)	3
5	Development of MEMS Gyroscope	Department of Space (Inhouse Project)	3