Simulation and Modelling of GaN HEMTs for MMIC Applications

PI Details Co-PI Details
Dr. Arun Kumar Singh

Designation: Professor
Department: Electronics and Communication Engineering
Email ID: arun@pec.edu.in

 Dr. Sanjeev Kumar

Designation: Professor
Department: Physics Department
Email ID: sanjeev@pec.edu.in
Funding Agency Project Cost
ER& IPR, DRDO, New Delhi

Rs. 31,84,000.00

Amount Received till date (in Rs.) Rs. .30,18,484.00
Start Date Completion Date Status
2016-08-29 2018-08-28 Completed
Abstract
sponsored_project_image sponsored_project_image

This research highlights the high power GaN HEMT technology for the high frequency applications. Semi-insulating SiC substrates are used for optimal performance at higher temperatures. This technology features high performance, high power density, high gain and high efficiency at microwave frequencies. We have reported on the simulation and modelling of GaN transistor and its performance relevant to applications ranging from high power, high frequency and high bandwidth. Additionally, we have analyzed the noise characteristics and cut-off frequencies of the device.

Manpower Sanctioned/Hired Manpower Trained

JRF (Nos): 02
 

Ph.D Produced: 01
M.Tech. Produced: 01

 
Equipment Sanctioned/Procured

Name of Equipment

Make & Model

Year of Purchase

Cost

 (Rs.)

Salient Features of Equipment

Condition (Working /Not Working)

Workstation(with Xeon based processor,64 GB RAM, 2 TB HDD,24” Monitor, operating system-red Hat Linux )

HP

2016

8,74,650.00

High End system for simulations etc.

Working

Printer

HP

2016

43,050.00

For Printouts

Working

UPS 5KVA

(with 120 minutes backup)

Delta

2016

99,866.00

For Power Backup

Working
Publications
List of SCI Publications under Project

Authors Name

Title of Paper

Journal Name

Volume No.

Page No.

Year

DOI Number

Madhulika, A. Malik, N. Jain, M. Mishra, S.Kumar, D. S. Rawal and A. K. Singh

Analytical Model to Evaluate Threshold Voltage of GaN Based HEMT Involving Nanoscale Material Parameters

Superlattices and Microst.

152

106834

2021

https://doi.org/10.1016/j.spmi.2021.106834

Madhulika, A. Malik, P. Kamboj, S. Awasthi, P. Thakur, N. Jain, M. Mishra, S. Kumar, D. S. Rawal and A. K. Singh

Parameter-based modeling of nanoscale material thermal noise in gallium nitride high-electron-mobility transistors

Semicond. Sci. Technol.

 

36

035004

2021

https://doi.org/10.1088/1361-6641/abd265

Madhulika, N. Jain, S. Kumar, A. K. Singh

Influence of barrier and spacer layer on structural and electrical properties of AlGaN/GaN HEMT

International Journal of Information Technology

12

119–124

2020

https://doi.org/10.1007/s41870-019-00348-0

Madhulika, A. Malik, N. Jain, M. Mishra, S.Kumar, D. S. Rawal and A. K. Singh

Nanoscale structural parameters based analytical model for GaN HEMTs

Superlattice and Microst.

130

267-276

2019

https://doi.org/10.1016/j.spmi.2019.04.040
List of Conference Publication Published in Proceedings under Project

Authors Name

Title of Paper

Name of Conference

Place

National/

International

Page No.

Year

DOI Number

Madhulika, H. Pandey, M. Garg, N. Jain, S. Kumar, D. S. Rawal, M. Mishra, and A. K. Singh

Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate

International Workshop on the Physics of Semiconductor and Devices

New Delhi

International

-

2018

 

DOI: 10.1007/978-3-319-97604-4_25
Output/Outcome of the Project
Output/Outcome of the project
  1. Developed a TCAD model that accurately models the measured DC characteristics of the GaN HEMT
  2. An analytical model is developed that considers the variations in permittivity due to the change in thickness of the semiconductor layers from their bulk counterpart to the nanoscale for the first time. In addition, the influence of trap density on channel charge is considered in the model.
  3. Scattering parameters of the device, the frequency and noise analysis of the fabricated GaN HEMT device is done using TCAD and MATLAB.
  4. TCAD model is further extended for Multi finger GaN HEMT. The DC and frequency analysis have been performed using TCAD
  5. Three dimensional simulation of GaN HEMT are performed and the results are in conformity with the two dimensional results.
  6. Developed a TCAD model for simulation of GaN HEMT at different temperatures.