S. Agnihotri, M. Kumar, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, Interlayer decoupling in twisted bilayers of ?-phosphorus and arsenic, FlatChem, 16, 100112, 2019. |
S. Agnihotri, P. Rastogi, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, Significant Enhancement of the Stark Effect in Rippled Monolayer Blue Phosphorous, ACS Journal of Physical Chemistry C, 122 (9), 5171-5177, Feb. 2018. |
S. Agnihotri, Y. S. Chauhan, A. Agarwal, and S. Bhowmick, Exploration of high symmetry ?-PxSiy materials for applications in 2D-electronics, Submitted. |
S. Khandelwal, C. Yadav, S. Agnihotri, Y. S. Chauhan, A. Curutchet, T. Zimmer, J.-C. Dejaeger, N. Defrance and T. A. Fjeldly, A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design, IEEE Transactions on Electron Devices, Vol. 60, Issue 10, Oct. 2013. |
S. Ghosh, A. Dasgupta, S. Khandelwal, S. Agnihotri, and Y. S. Chauhan, Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, Vol. 62, Issue 2, Feb. 2015. |
S. Agnihotri, P. Rastogi, A. Agarwal, and Y. S. Chauhan, Effect of Substitutional Mg Doping in In0.5Ga0.5N, IEEE Student Conference on Research and Development (SCOReD), Malaysia, Dec. 2017. |
S. Agnihotri, S. Ghosh, A. Dasgupta, A. Ahsan, S. Khandewal, and Y. S. Chauhan, Modeling of Trapping Effects in GaN HEMTs, IEEE India Conference (INDICON), New Delhi, India, Dec. 2015. |
S. Agnihotri, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, Impact of Gate Field Plate on DC, C-V, and Transient Characteristics of Gallium Nitride HEMTs, International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015. |
S. Agnihotri, S. Ghosh, A. Dasgupta, S. Khandewal, and Y. S. Chauhan, A Surface Potential based Model for GaN HEMTs, IEEE PrimeAsia, Visakhapatnam, Dec. 2013. |
S. Ghosh, S. Agnihotri, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, Analysis and Modeling of Trapping Effects in RF GaN HEMTs under Pulsed Conditions, International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015. |
M. Pattanaik, S. Agnihotri, M. V. D. L. Varaprashad and T. A. Arasu, Enhanced Ground Bounce Noise Reduction in a Low Leakage 90nm 1-Volt CMOS Full Adder Cell, 2010 IEEE International Symposium on Electronic System Design, Bhubaneswar, 2010, pp. 175-180. |
S. Ghosh, K. Sharma, S. Khandelwal, S. Agnihotri, T. A. Fjeldly, F. M. Yigletu, B. Iniguez, and Y. S. Chauhan, Modeling of Temperature Effects in a Surface-Potential Based ASM-HEMT model, IEEE International Conference on Emerging Electronics (ICEE), Bangalore, India, Dec. 2014. |
Y. S. Chauhan, S. Venugopalan, N. Paydavosi, P. Kushwaha, S. Jandhyala, J. P. Duarte, S. Agnihotri, C. Yadav, H. Agarwal, A. Niknejad, and C. Hu, BSIM Compact MOSFET Models for SPICE Simulation, IEEE International Conference Mixed Design of Integrated Circuits and Systems (MIXDES), Gdynia, Poland, June 2013. |
H. Agarwal, S. Venugopalan, M. Chalkiadaki, N. Paydavosi, J. P. Duarte, S. Agnihotri, C. Yadav, P.K ushwaha, Y. S. Chauhan, C. C. Enz, A. Niknejad and C. Hu, Recent Enhancements in BSIM6 Bulk MOSFET Model, IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Glasgow, Scotland, Sept. 2013. |